2N5484_07 Datasheet, PDF (5/8 Pages) Vishay Siliconix – N-Channel JFETs

2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
10
V_GS(off) = −2 V
V_DS = 10 V
8
T_A = −55_C
6
25_C
4 ^125_C
Transfer Characteristics
10
V_GS(off) = −3 V
V_DS = 10 V
8
T_A = −55_C
25_C
6
125_C
4
2
0
0
−0.4
−0.8
−1.2
−1.6
−2
V_GS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
V_GS(off) = −2 V
V_DS = 10 V
f = 1 kHz
8
T_A = −55_C
6
25_C
4
125_C
2
0
0
−0.4
−0.8
−1.2
−1.6
−2
V_GS − Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300
T_A = 25_C
240
V_GS(off) = −2 V
180
−3 V
120
60
0
0.1
1
10
I_D − Drain Current (mA)
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
2
0
0
−0.6
−1.2
−1.8
−2.4
−3
V_GS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
V_GS(off) = −3 V
V_DS = 10 V
f = 1 kHz
8
T_A = −55_C
6
25_C
4
125_C
2
0
0
−0.6
−1.2
−1.8
−2.4
−3
V_GS − Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100
g_fs R_L
A_V + _{1 ) RLgos}
80
Assume V_DD = 15 V, V_DS = 5 V
10 V
R_L + _ID
60
40
20
0
0.1
V_GS(off) = −2 V
−3 V
1
10
I_D − Drain Current (mA)
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