2N5484_07 Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-Channel JFETs

2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Power Dissipation^a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR 2N SERIES (T_A = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484
2N5485
2N5486
Parameter
Symbol
Test Conditions
Typ^a Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current^b
Gate Reverse Current
Gate Operating Current^c
Gate-Source
Forward Voltage^c
V_(BR)GSS
V_GS(off)
I_DSS
I_GSS
I_G
V_GS(F)
I_G = −1 mA , V_DS = 0 V
V_DS = 15 V, I_D = 10 nA
V_DS = 15 V, V_GS = 0 V
V_GS = −20 V, V_DS = 0 V
T_A = 100_C
V_DG = 10 V, I_D = 1 mA
I_G = 10 mA , V_DS = 0 V
−35 −25
−25
−25
V
−0.3 −3 −0.5 −4 −2 −6
1
5
4
10
8
20 mA
−0.002
−0.2
−1
−200
−1
−200
−1
nA
−200
−20
pA
0.8
V
Dynamic
Common-Source
Forward Transconductance^{NO TAG}
Common-Source
Output Conductance^{NO TAG}
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage^c
g_fs
g_os
C_iss
C_rss
C_oss
e_n
V_DS = 15 V, V_GS = 0 V
f = 1 kHz
V_DS = 15 V, V_GS = 0 V
f = 1 MHz
V_DS = 15 V, V_GS = 0 V
f = 100 Hz
3
6
3.5
7
4
8
mS
50
60
75
mS
2.2
5
5
5
0.7
1
1
1
pF
1
2
2
2
10
nV⁄
√Hz
High-Frequency
Common-Source
Transconductance^d
Common-Source
Output Conductance^d
Common-Source
Input Conductance^d
Common-Source Power Gain^d
Noise Figure^d
Y_fs(RE)
Y_os(RE)
Y_is(RE)
G_ps
NF
f = 100 MHz
f = 400 MHz
V_DS = 15 V
V_GS = 0 V
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
V_DS = 15 V, I_D = 1 mA
f = 100 MHz
V_DS = 15 V
I_D = 4 mA
f = 100 MHz
f = 400 MHz
V_DS = 15 V, V_GS = 0 V
R_G = 1 MW, f = 1 kHz
V_DS = 15 V, I_D = 1 mA
R_G = 1 kW, f = 100 MHz
V_DS = 15 V
I_D = 4 mA
R_G = 1 kW
f = 100 MHz
f = 400 MHz
5.5
2.5
mS
5.5
3
3.5
45
75
mS
65
100
100
0.05
0.1
mS
0.8
1
1
20
16
25
21
18
30
18
30
13
10
20
10
20
0.3
2.5
2.5
2.5
dB
2
3
1
2
2
2.5
4
4
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2
Document Number: 70246
S-50148—Rev. G, 24-Jan-05