2N5484_07 Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel JFETs

2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
10
16
I_DSS
8
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
100
r_DS @ I_D = 300 mA, V_GS = 0 V
g_os @ V_DS = 10 V, V_GS = 0 V
400
f = 1 kHz
80
12
g_fs
8
6
300
r_DS
60
g_os
4
200
40
4
I_DSS @ V_DS = 10 V, V_GS = 0 V
2
g_fs @ V_DS = 10 V, V_GS = 0 V
f = 1 kHz
0
0
0
−2
−4
−6
−8
−10
V_GS(off) − Gate-Source Cutoff Voltage (V)
100 nA
10 nA
1 nA
Gate Leakage Current
I_D = 5 mA
1 mA
T_A = 125_C
0.1 mA
100 pA
10 pA
1 pA
I_D = 5 mA
T_A = 25_C
I_GSS @
125_C
1 mA
0.1 mA
I_GSS @ 25_C
0.1 pA
0
10
8
4
8
12
16
20
V_DG − Drain-Gate Voltage (V)
Output Characteristics
V_GS(off) = −2 V
V_GS = 0 V
6
−0.2 V
−0.4 V
4
−0.6 V
−0.8 V
−1.0 V
2
−1.2 V
0
0
−1.4 V
2
4
6
8
10
V_DS − Drain-Source Voltage (V)
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4
100
20
0
0
0
−2
−4
−6
−8
−10
V_GS(off) − Gate-Source Cutoff Voltage (V)
Common-Source Forward
Transconductance vs. Drain Current
10
V_GS(off) = −3 V
V_DS = 10 V
f = 1 kHz
8
6
T_A = −55_C
25_C
4
125_C
2
0
0.1
15
12
9
6
3
0
0
1
10
I_D − Drain Current (mA)
Output Characteristics
V_GS(off) = −3 V
V_GS = 0 V
−0.3 V
−0.6 V
−0.9 V
−1.2 V
−1.5 V
−1.8 V
2
4
6
8
10
V_DS − Drain-Source Voltage (V)
Document Number: 70246
S-50148—Rev. G, 24-Jan-05