VS-MURD620CTHM3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Low leakage current

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180
170
160
DC
150
Square wave (D = 0.50)
Rated V_R applied
140
130
See note (1)
120
0
1
2
3
4
5
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
DC
0.5
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0
1
2
3
4
5
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
VS-MURD620CTHM3
Vishay Semiconductors
50
V_R = 30 V
T_J = 125 °C
T_J = 25 °C
40
I_F = 3 A
I_F = 6 A
30
20
10
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
140
V_R = 30 V
120 ^TJ ^{= 125 °C}
T_J = 25 °C
100 I_F = 6 A
I_F = 3 A
80
60
40
20
0
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Revision: 10-Jul-15
4
Document Number: 94742
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