VS-MURD620CTHM3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Low leakage current

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VS-MURD620CTHM3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt^®
TO-252AA (D-PAK)
Base
common
cathode
4
2
Common
cathode
1
3
Anode
Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
TO-252AA (D-PAK)
2x3A
200 V
0.96 V
See Recovery table
175 °C
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS
VS-MURD620CTHM3 is the state of the art ultrafast
recovery rectifier specifically designed with optimized
performance of forward voltage drop and ultrafast recovery
time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current per device
Non-repetitive peak surge current
Peak repetitive forward current per diode
Operating junction and storage temperatures
SYMBOL
V_RRM
I_F(AV)
I_FSM
I_FM
T_J, T_Stg
TEST CONDITIONS
Total device, rated V_R, T_C = 146 °C
Rated V_R, square wave, 20 kHz, T_C = 146 °C
MAX.
200
6
50
6
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
V_BR,
V_R
V_F
I_R
C_T
L_S
I_R = 100 μA
200
I_F = 3 A
-
I_F = 3 A, T_J = 125 °C
-
I_F = 6 A
-
I_F = 6 A, T_J = 125 °C
-
V_R = V_R rated
-
T_J = 125 °C, V_R = V_R rated
-
V_R = 200 V
-
Measured lead to lead 5 mm from package body
-
TYP.
-
-
-
-
-
-
-
12
8.0
MAX.
-
1.0
0.96
1.2
1.13
5
250
-
-
UNITS
V
μA
pF
nH
Revision: 10-Jul-15
1
Document Number: 94742
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000