VS-MURD620CTHM3 Datasheet, PDF (3/7 Pages) Vishay Siliconix – Low leakage current

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100
10
T_J = 175 °C
1
T_J = 150 °C
T_J = 25 °C
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
VS-MURD620CTHM3
Vishay Semiconductors
100
T_J = 175 °C
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 100 °C
0.1
0.01
T_J = 25 °C
0.001
0
50
100
150
200
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
T_J = 25 °C
10
1
10
100
1000
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
t
1
t
2
Notes:
1. Duty factor D = t₁/t_{2 .}
2. Peak T_J = P_DM x Z_thJC + T_C
.
0.1
1
t₁ - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z_thJC Characteristics
Revision: 10-Jul-15
3
Document Number: 94742
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