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| VS-MURD620CTHM3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Low leakage current | |||
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www.vishay.com
VS-MURD620CTHM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
20
Reverse recovery time
trr
TJ = 25 °C
-
19
TJ = 125 °C
-
26
Peak recovery current
TJ = 25 °C
IF = 3 Aï
-
3.1
IRRM
dIF/dt = 200 A/μsï
TJ = 125 °C
VR = 160 V
-
4.6
Reverse recovery charge
TJ = 25 °C
Qrr
TJ = 125 °C
-
30
-
60
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ, TStg
Thermal resistance,ï
junction to case per leg
RthJC
Thermal resistance,ï
junction to ambient per leg
RthJA
Thermal resistance,ï
case to heatsink
RthCS
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style TO-252AA (D-PAK)
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
-
9.0
-
80
-
-
0.3
-
0.01
-
-
12
(10)
MURD620CTH
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
Revision: 10-Jul-15
2
Document Number: 94742
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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