VS-50MT060WHTAPBF Datasheet, PDF (4/6 Pages) Vishay Siliconix – Half Bridge IGBT MTP (Warp Speed IGBT), 114 A

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3.0
2.5
I_C = 100 A
2.0
I_C = 50 A
1.5
I_C = 20 A
1.0
20 40 60 80 100 120 140 160
94468_03
T_J - Junction Temperature (°C)
Fig. 3 - Typical Collector to Emitter Voltage vs.
Junction Temperature
20
V_CC = 400 V
I_C = 52 A
16
12
8
4
0
0
94468_04
100
100
200
300
400
O_G - Typical Gate Charge (nC)
Fig. 4 - Typical Gate Charge vs.
Gate to Emitter Votlage
10
T_J = 150 °C
T_J = 125 °C
T_J = 25 °C
1
0.4
0.8
1.2
1.6
2.0
2.4
94468_05
V_FM - Forward Voltage Drop (V)
Fig. 5 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
VS-50MT060WHTAPbF
Vishay Semiconductors
160
V_R = 200 V
140
I_F = 50 A, T_J = 125 °C
120
100
I_F = 50 A, T_J = 25 °C
80
60
100
1000
94468_06
dI_F/dt (A/µs)
Fig. 6 - Typical Reverse Recovery Time vs. dI_F/dt
100
V_R = 200 V
I_F = 50 A, T_J = 125 °C
10
I_F = 50 A, T_J = 25 °C
1
100
1000
94468_07
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Current vs. dI_F/dt
2000
V_R = 200 V
1500
1000
I_F = 50 A, T_J = 125 °C
500
I_F = 50 A, T_J = 25 °C
0
100
1000
94468_08
dI_F/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Revision: 10-Jun-15
4
Document Number: 94468
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