English
Language : 

VS-50MT060WHTAPBF Datasheet, PDF (2/6 Pages) Vishay Siliconix – Half Bridge IGBT MTP (Warp Speed IGBT), 114 A
www.vishay.com
VS-50MT060WHTAPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 50 A
Collector to emitter voltage
VCE(on) VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 50 A, TJ = 150 °C
Gate threshold voltage
VGE(th) IC = 0.5 mA
Collector to emitter leaking current
Diode forward voltage drop
Gate to emitter leakage current
VGE = 0 V, IC = 600 A
ICES
VGE = 0 V, IC = 600 A, TJ = 150 °C
IF = 50 A, VGE = 0 V
VFM
IF = 50 A, VGE = 0 V, TJ = 150 °C
IF = 100 A, VGE = 0 V, TJ = 25 °C
IGES
VGE = ± 20 V
MIN.
600
-
-
-
3
-
-
-
-
-
-
TYP.
-
2.3
2.5
1.72
-
-
-
1.58
1.49
1.9
-
MAX.
-
3.15
3.2
2.17
6
0.4
10
1.80
1.68
2.17
± 250
UNITS
V
V
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Qg
Qge
Qgc
Eon
Eoff
Ets
Eon
Eoff
Ets
Cies
Coes
Cres
IC = 52 A
-
VCC = 400 V
-
VGE = 15 V
-
Internal gate resistors (see electrical diagram) -
IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
-
Energy losses include tail and diode reverse
recovery, TJ = 25 °C
-
Internal gate resistors (see electrical diagram) -
IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
-
Energy losses include tail and diode reverse
recovery, TJ = 150 °C
-
VGE = 0 V
-
VCC = 30 V
-
f = 1.0 MHz
-
Diode reverse recovery time
trr
-
Diode peak reverse current
Irr
VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs
-
Diode recovery charge
Qrr
-
Diode reverse recovery time
trr
VCC = 200 V, IC = 50 A
-
Diode peak reverse current
Irr
dI/dt = 200 A/μs
-
Diode recovery charge
Qrr
TJ = 125 °C
-
TYP.
331
44
133
0.26
1.2
1.46
0.73
1.66
2.39
7100
510
140
82
8.3
340
137
12.7
870
MAX.
385
52
176
-
-
-
-
-
-
-
-
-
97
10.6
514
153
14.8
1132
UNITS
nC
mJ
mJ
pF
ns
A
nC
ns
A
nC
Revision: 10-Jun-15
2
Document Number: 94468
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000