VS-50MT060WHTAPBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Half Bridge IGBT MTP (Warp Speed IGBT), 114 A

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VS-50MT060WHTAPbF
Vishay Semiconductors
“Half Bridge” IGBT MTP (Warp Speed IGBT), 114 A
MTP
PRODUCT SUMMARY
V_CES
V_CE(on) typical at V_GE = 15 V
I_C at T_C = 25 °C
Speed
Package
Circuit
600 V
2.3 V
114 A
30 kHz to 100 kHz
MTP
Half bridge
FEATURES
• Gen 4 warp speed IGBT technology
• HEXFRED^® antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Very low junction to case thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low stray inductance design for high speed operation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
Maximum power dissipation
P_D
TEST CONDITIONS
T_C = 25 °C
T_C = 109 °C
T_C = 109 °C
Any terminal to case, t = 1 min
T_C = 25 °C
T_C = 100 °C
MAX.
600
114
50
350
350
34
200
± 20
2500
658
263
UNITS
V
A
V
W
Revision: 10-Jun-15
1
Document Number: 94468
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000