VS-50MT060WHTAPBF Datasheet, PDF (3/6 Pages) Vishay Siliconix – Half Bridge IGBT MTP (Warp Speed IGBT), 114 A

www.vishay.com
VS-50MT060WHTAPbF
Vishay Semiconductors
THERMISTOR SPECIFICATIONS
PARAMETER
SYMBOL
Resistance
Sensitivity index of the
thermistor material
R₀ ⁽¹⁾
 ⁽¹⁾⁽²⁾
Notes
(1) _{T0, T1 are thermistor´s temperatures}
(2)
R_-----0-
R₁
=
exp



--¹---
T₀
–
T^--1--₁^{- }
, temperature in Kelvin
T₀ = 25 °C
T₀ = 25 °C
T₁ = 85 °C
TEST CONDITIONS
MIN.
-
TYP.
30
MAX. UNITS
-
k
-
4000
-
K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNITS
Operating junction  ^{IGBT, Diode}
temperature range
Thermistor
T_J
-40
-
150
-40
-
125
°C
Storage temperature range
Junction to case
IGBT
Diode
T_Stg
R_thJC
-40
-
125
-
-
0.38
-
-
0.8 °C/W
Case to sink per module
Clearance ⁽¹⁾
Creepage ⁽¹⁾
Mounting torque to heatsink
Weight
R_thCS Heatsink compound thermal conductivity = 1 W/mK -
0.06
-
External shortest distance in air between 2 terminals 5.5
-
Shortest distance along the external surface of the
insulating material between 2 terminals
8
-
-
mm
-
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
3 ± 10 %
Nm
the spread of the compound. Lubricated threads.
66
g
Note
(1) _{Standard version only i.e. without optional thermistor}

100
V_GE = 15 V
20 μs pulse width
10
T_J = 150 °C
T_J = 25 °C
1
0.1
1.0
10
94468_01
V_CE - Collector to Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
120
100
80
60
40
20
0
25
50
75
100
125
150
94468_02
T_C - Case Temperature (°C)
Fig. 2 - Maximum Collector Current vs. Case Temperature
Revision: 10-Jun-15
3
Document Number: 94468
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000