Si7810DN Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

Si7810DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
I_D = 250 mA
0.2
Single Pulse Power, Juncion-To-Ambient
50
40
–0.0
30
–0.2
–0.4
20
–0.6
–0.8
10
–1.0
–1.2
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
100
600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
2
1
Duty Cycle = 0.5
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10^–4
www.vishay.com
4
10^–3
10^–2
Square Wave Pulse Duration (sec)
10^–1
1
Document Number: 70689
S-04559—Rev. A, 27-Aug-01