Si7810DN Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

Si7810DN
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
2
V_DS = 0 V, V_GS = "20 V
V_DS = 80 V, V_GS = 0 V
V_DS = 80 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
20
V_GS = 10 V, I_D = 5.4 A
V_GS = 6 V, I_D = 4.6 A
V_DS = 15 V, I_D = 5.4 A
I_S = 3.2 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 50 V, V_GS = 10 V, I_D = 5.4 A
V_DD = 50 V, R_L = 50 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 3.2 A, di/dt = 100 A/ms
Typ Max Unit
V
"100
nA
1
mA
5
A
0.052
0.062
W
0.070
0.084
12
S
0.78
1.2
V
13.5
17
3
nC
4.6
10
15
15
25
20
30
ns
15
25
45
90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V_GS = 10 thru 7 V
6V
16
Transfer Characteristics
20
16
12
12
8
5V
4
4V
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
8
T_C = 125_C
4
25_C
–55_C
0
0
1
2
3
4
5
6
7
V_GS – Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 70689
S-04559—Rev. A, 27-Aug-01