Si7810DN Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

New Product
N-Channel 100-V (D-S) MOSFET
Si7810DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
100
r_DS(on) (W)
0.062 @ V_GS = 10 V
0.084 @ V_GS = 6 V
I_D (A)
5.4
4.6
PowerPAKt 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance
D PowerPAKt 1212-8 Package with Low
1.07-mm Profile
D PWM Optimized
APPLICATIONS
D Primary Side Switch
D In-Rush Current Limiter
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
100
"20
5.4
3.4
4.3
2.8
20
3.2
1.3
19
18
3.8
1.5
2.0
0.8
–55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70689
S-04559—Rev. A, 27-Aug-01
Symbol
R_thJA
R_thJC
Typical
26
65
1.9
Maximum
33
81
2.4
Unit
_C/W
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