Si7810DN Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

New Product
Si7810DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1000
Capacitance
0.16
0.12
0.08
0.04
V_GS = 6 V
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D – Drain Current (A)
Gate Charge
10
V_DS = 50 V
8
I_D = 5.4 A
6
4
2
0
0
2
4
6
8
10 12 14
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
800
C_iss
600
400
C_oss
200
C_rss
0
0
20
40
60
80
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2
2.0
V_GS = 10 V
I_D = 5.4 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.16
0.12
0.08
I_D = 5.4 A
T_J = 25_C
0.04
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 70689
S-04559—Rev. A, 27-Aug-01
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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