SUP75N03-04 Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C MOSFET

SUP/SUB75N03-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 30 A
2.0
1.5
10
1.0
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.5
0.0
–50 –25
0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
1
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
80
Limited
100
by r_DS(on)
60
40
10
20
T_C = 25_C
Single Pulse
0
0
2
25 50 75 100 125 150 175
T_C – Case Temperature (_C)
1
0.1
1.0
10.0
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Duty Cycle = 0.5
100 ms
1 ms
10 ms
100 ms
dc
0.2
0.1
0.1 _0.05
0.02
0.01
10^–5
Single Pulse
10^–4
www.vishay.com
2-4
10^–3
10^–2
Square Wave Pulse Duration (sec)
10^–1
1
3
Document Number: 70745
S-04137—Rev. E, 18-Jun-01