SUP75N03-04 Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C MOSFET

SUP/SUB75N03-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V_GS = 10, 9, 8, 7, 6, 5 V
200
4V
150
100
50
3V
0
0
175
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transconductance
150
T_C = –55_C
125
100
25_C
125_C
75
50
25
0
0
14000
20
40
60
80
100
V_GS – Gate-to-Source Voltage (V)
Capacitance
12000
C_iss
10000
8000
6000
4000
C_rss
2000
C_oss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
Transfer Characteristics
200
150
100
50
T_C = 125_C
25_C
–55_C
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
0.008
On-Resistance vs. Drain Current
0.006
0.004
0.002
V_GS = 4.5 V
V_GS = 10 V
0.000
0
20
20
40
60
80
100 120
I_D – Drain Current (A)
Gate Charge
16
V_DS = 30 V
I_D = 75 A
12
8
4
0
0
100
200
300
400
Q_g – Total Gate Charge (nC)
Document Number: 70745
S-04137—Rev. E, 18-Jun-01
www.vishay.com
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