SUP75N03-04 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C MOSFET

SUP/SUB75N03-04
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (W)
30
0.004
I_D (A)
75^a
TO-220AB
D
TO-263
DRAIN connected to TAB
GD S
Top View
SUP75N03-04
G DS
Top View
SUB75N03-04
DRAIN connected to TAB
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current
(T_J = 175_C)
Pulsed Drain Current
T_C = 25_C
T_C = 125_C
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
L = 0.1 mH
Repetitive Avalanche Energy^b
L = 0.05 mH
Maximum Power Dissipation
T_C = 25_C (TO-220AB and TO-263)
T_A = 25_C (TO-263)^d
Operating Junction and Storage Temperature Range
Lead Temperature
(¹/₁₆” from case for 10 sec.)
TO-220AB
V_GS
I_D
I_DM
I_S
I_AR
E_AS
E_AR
P_D
T_J, T_stg
T_L
"20
75^a
75^a
250
75
75
280
140
187^c
3.7
–55 to 175
300
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)^d
Free Air (TO-220AB)
R_thJA
R_thJC
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70745
S-04137—Rev. E, 18-Jun-01
Limit
40
62.5
0.6
Unit
_C/W
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