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| SUP75N03-04 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C MOSFET | |||
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SUP/SUB75N03-04
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 125_C
VDS = 30 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 75 A
VGS = 4.5 V, ID = 75 A
VGS = 10 V, ID = 25 A, TJ = 125_C
VGS = 10 V, ID = 25 A, TJ = 175_C
VDS = 15 V, ID = 25 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltageb
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
VSD
trr
IRM(rec)
Qrr
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 75 A
VDD = 30 V, RL = 0.6 W
ID ^ 50 A, VGEN = 10 V, RG = 2.5 W
IF = 75 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Min Typa Max Unit
30
V
1
3
"500
nA
1
50
mA
200
120
A
0.0034 0.004
0.005
0.006
W
0.006
0.008
30
S
10742
1811
pF
775
200
250
40
nC
40
20
40
40
ns
190
95
1.3
V
70
120
ns
2.8
6
A
0.1
0.36
mC
www.vishay.com
2-2
Document Number: 70745
S-04137âRev. E, 18-Jun-01
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