SUP70N03-09P Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized

SUP/SUB70N03-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.4
100
V_GS = 10 V
2.0
I_D = 30 A
Source-Drain Diode Forward Voltage
1.6
T_J = 150_C
T_J = 25_C
1.2
10
0.8
0.4
0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
80
1
0
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
500
60
Limited
100
by r_DS(on)
10 ms
100 ms
40
20
0
0
2
25 50 75 100 125 150 175
T_C – Case Temperature (_C)
10
1
0.1
T_C = 25_C
Single Pulse
1 ms
10 ms
100 ms
dc
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.02
0.01
10^–5
Single Pulse
10^–4
www.vishay.com S FaxBack 408-970-5600
2-4
10^–3
10^–2
Square Wave Pulse Duration (sec)
10^–1
1
3
Document Number: 70821
S-59917—Rev. A, 28-Sep-98