SUP70N03-09P Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized

SUP/SUB70N03-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
180
100
V_GS = 10 thru 7 V
6V
150
80
120
90
60
30
0
0
5V
4V
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
60
40
20
0
0
Transfer Characteristics
T_C = 125_C
25_C
–55_C
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Transconductance
100
T_C = –55_C
80
25_C
60
125_C
40
20
0.030
0.025
0.020
0.015
0.010
0.005
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
0
0
4000
10 20 30 40 50 60 70
I_D – Drain Current (A)
Capacitance
0
0
20
40
60
80
100
I_D – Drain Current (A)
Gate Charge
10
3000
2000
1000
C_rss
C_iss
C_oss
8
V_DS = 15 V
I_D = 70 A
6
4
2
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
Document Number: 70821
S-59917—Rev. A, 28-Sep-98
0
0
10
20
30
40
50
Q_g – Total Gate Charge (nC)
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