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| SUP70N03-09P Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized | |||
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SUP/SUB70N03-09P
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125_C
VDS = 24 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 70 A
VDD = 15 V, RL = 0.21 W
ID ] 70 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
IS
ISM
VSD
IF = 70 A, VGS = 0 V
trr
IF = 70 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min
30
1
70
30
Typ Max Unit
V
2
"100
nA
1
50
mA
150
A
0.007 0.009
0.0135
W
0.017
0.011 0.015
60
S
2700
680
pF
360
45
70
8.5
nC
11
13
20
7
15
ns
35
60
12
20
70
A
180
1.2
1.5
V
35
70
ns
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70821
S-59917âRev. A, 28-Sep-98
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