SUP70N03-09P Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized

SUP/SUB70N03-09P
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (W)
0.009 @ V_GS = 10 V
30
0.015 @ V_GS = 4.5 V
I_D (A)
"70^a
"55
TO-220AB
D
TO-263
DRAIN connected to TAB
GD S
Top View
SUP70N03-09
G DS
Top View
SUB70N03-09
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^b
Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
"30
"20
"70^a
"50
"180
"45
101
93^c
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)^d
Free Air (TO-220AB)
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70821
S-59917—Rev. A, 28-Sep-98
Symbol
R_thJA
R_thJC
Limit
40
62.5
1.6
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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