SUP60N10-16L_16 Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175C MOSFET

SUP60N10-16L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
I_D = 30 A
2.0
1.5
1.0
0.5
0.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
100
10
T_J = 150_C
T_J = 25_C
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
130
125
I_D = 10 mA
120
115
110
105
100
95
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
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4
Document Number: 71928
S-03600—Rev. B, 31-Mar-03