SUP60N10-16L_16 Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175C MOSFET

SUP60N10-16L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120
120
V_GS = 10 thru 6 V
5V
100
90
80
Transfer Characteristics
60
60
30
0
0
4V
3V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
40
T_C = 125_C
20
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS - Gate-to-Source Voltage (V)
Transconductance
160
T_C = - 55_C
120
25_C
125_C
80
40
0.030
0.025
0.020
0.015
0.010
0.005
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
0
0 10 20 30 40 50 60 70 80 90
I_D - Drain Current (A)
6000
Capacitance
0.000
0
10
20
40
60
80
100
I_D - Drain Current (A)
Gate Charge
5000
C_iss
4000
3000
2000
1000
0
0
C_rss
C_oss
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Document Number: 71928
S-03600—Rev. B, 31-Mar-03
8
V_DS = 50 V
I_D = 60 A
6
4
2
0
0 10 20 30 40 50 60 70 80
Q_g - Total Gate Charge (nC)
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