SUP60N10-16L_16 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175C MOSFET

SUP60N10-16L
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
100
r_DS(on) (W)
0.016 @ V_GS = 10 V
0.018 @ V_GS = 4.5 V
TO-220AB
I_D (A)
60
56
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized
APPLICATIONS
D DC/DC Primary Side Switch
D
G
DRAIN connected to TAB
GD S
Top View
SUP60N10-16L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
100
"20
60
35
100
40
80
150^b
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (Free Air)
Junction-to-Case
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Symbol
R_thJA
R_thJC
Limit
62.5
1.0
Unit
V
A
mJ
W
_C
Unit
_C/W
Document Number: 71928
S-03600—Rev. B, 31-Mar-03
www.vishay.com
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