SUP60N10-16L_16 Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175C MOSFET

SUP60N10-16L
Vishay Siliconix
SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 80 V, V_GS = 0 V
V_DS = 80 V, V_GS = 0 V, T_J = 125_C
V_DS = 80 V, V_GS = 0 V, T_J = 175_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 4.5 V, I_D = 20 A
V_GS = 10 V, I_D = 30 A, T_J = 125_C
V_GS = 10 V, I_D = 30 A, T_J = 175_C
V_DS = 15 V, I_D = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 50 V, V_GS = 10 V, I_D = 60 A
Gate Resistance
R_G
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
t_d(on)
t_r
t_d(off)
t_f
V_DD = 50 V, R_L = 0.83 W
I_D ^ 60 A, V_GEN = 10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_S
I_SM
V_SD
t_rr
I_RM(REC)
Q_rr
I_F = 60 A, V_GS = 0 V
I_F = 50 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
100
V
1
3
"100
nA
1
50
mA
250
100
A
0.0125
0.016
0.014
0.018
W
0.030
0.040
25
S
3820
450
pF
210
73
110
15
nC
20
1.5
W
12
25
90
135
ns
55
85
130
195
60
A
100
1.0
1.5
V
62
100
ns
3.1
5
A
0.10
0.25
mC
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Document Number: 71928
S-03600—Rev. B, 31-Mar-03