SUM110P06-08L Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 Degrees Celcious MOSFET

SUM110P06-08L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 30 A
1.7
1.4
1.1
0.8
0.5
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
Avalanche Current vs. Time
1000
100
10
I_AV (A) @ T_A = 25_C
1
I_AV (A) @ T_A = 150_C
0.1
0.00001 0.0001 0.001
0.01
0.1
1
t_in (Sec)
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
1
0.0
0.3
0.6
0.9
1.2
V_SD − Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
76
I_D = 250 mA
72
68
64
60
56
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
www.vishay.com
4
Document Number: 73045
S-41506—Rev. A, 09-Aug-04