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SUM110P06-08L Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 Degrees Celcious MOSFET | |||
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SUM110P06-08L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = â250 mA
VDS = VGS, ID = â250 mA
VDS = 0 V, VGS = "20 V
VDS = â60 V, VGS = 0 V
VDS = â60 V, VGS = 0 V, TJ = 125_C
VDS = â60 V, VGS = 0 V, TJ = 175_C
VDS = â5 V, VGS = â10 V
VGS = â10 V, ID = â30 A
VGS = â10 V, ID = â30 A, TJ = 125_C
VGS = â10 V, ID = â30 A, TJ = 175_C
VGS = â4.5 V, ID = â20 A
VDS = â15 V, ID = â50 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = â25 V, f = 1 MHz
VDS = â30 V, VGS = â10 V, ID = â110 A
f = 1.0 MHz
VDD = â30 V, RL = 0.27 W
ID ] â110 A, VGEN = â10 V, Rg = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
IF = â50 A, VGS = 0 V
IF = â50 A, di/dt = 100 A/ms
Min Typ Max Unit
â60
V
â1
â3
"100
nA
â1
â50
mA
â250
â120
A
0.0065 0.008
0.0129
W
0.016
0.0085 0.0105
20
S
9200
975
pF
760
160
240
40
nC
36
1.5
3
4.5
W
20
30
190
285
ns
140
210
300
450
â110
A
â200
â1.0
â1.5
V
60
90
ns
â3
â4.5
A
0.09
0.2
mC
www.vishay.com
2
Document Number: 73045
S-41506âRev. A, 09-Aug-04
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