SUM110P06-08L Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 Degrees Celcious MOSFET

New Product
SUM110P06-08L
Vishay Siliconix
P-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.008 @ V_GS = −10 V
−60
0.0105 @ V_GS = −4.5 V
I_D (A)^d
−110
−110
FEATURES
D TrenchFETr Power MOSFET
D New Package with Low Thermal Resistance
D 100% R_g Tested
APPLICATIONS
D Automotive Such As
− High-Side Switch
− Motor Drives
− 12-V Boardnet
S
TO-263
G
G DS
Top View
Ordering Information: SUM110P06-08L
SUM110P06-08L—E3 (Lead (Pb)-Free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^d
(T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy^a
Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C^b
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_J, T_stg
−60
"20
−110
−75
−200
−65
211
272^c
3.75^b
−55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient PCB Mount^b
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
Symbol
R_thJA
R_thJC
Limit
40
0.55
Document Number: 73045
S-41506—Rev. A, 09-Aug-04
Unit
V
A
mJ
W
_C
Unit
_C/W
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