SUM110P06-08L Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 Degrees Celcious MOSFET

New Product
SUM110P06-08L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
200
V_GS = 10 thru 5 V
160
160
Transfer Characteristics
120
80
40
0
0
200
160
120
80
40
4V
3V
2
4
6
8
10
V_DS − Drain-to-Source Voltage (V)
Transconductance
T_C = −55_C
25_C
125_C
120
80
40
T_C = 125_C
25_C
−55_C
0
0
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
0.020
On-Resistance vs. Drain Current
0.016
0.012
0.008
0.004
V_GS = 4.5 V
V_GS = 10 V
0
0
15000
10 20 30 40 50 60 70 80
I_D − Drain Current (A)
Capacitance
12000
C_iss
9000
0.000
0
20
20
40
60
80
100 120
I_D − Drain Current (A)
Gate Charge
16
V_DS = 30 V
I_D = 110 A
12
6000
8
3000
C_oss
C_rss
0
0
10
20
30
40
50
60
V_DS − Drain-to-Source Voltage (V)
4
0
0 40 80 120 160 200 240 280 320
Q_g − Total Gate Charge (nC)
Document Number: 73045
S-41506—Rev. A, 09-Aug-04
www.vishay.com
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