SUM110P06-07L_15 Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 60 V (D-S) 175 MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
75
V_GS = 10 V
I_D = 30 A
1.7
72
I_D = 250 µA
SUM110P06-07L
Vishay Siliconix
1.4
69
1.1
66
0.8
63
0.5
-50 -25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
60
-50 -25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
200
100
10
I_AV (A) at T_A = 25 °C
150
Package Limited
100
1
I_AV (A) at T_A = 150 °C
50
0.1
0.00001 0.0001 0.001
0.01
0.1
1
t_in (s)
Avalanche Current vs. Time
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Avalanche and Drain Current vs. Case Temperature
100
T_J = 150 °C
10
T_J = 25 °C
1000
Limited by R_(DSon)*
100
10
1
T_C = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
100 ms, DC
1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
0.1
0.1
* V_GS
1
10
100
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which R_DS(on) is specified
Source-Drain Diode Forward Voltage
Safe Operating Area
S15-1278-Rev. D, 08-Jun-15
4
Document Number: 72439
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