SUM110P06-07L_15 Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 60 V (D-S) 175 MOSFET

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SUM110P06-07L
Vishay Siliconix
P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
-60
R_DS(on) (Ω)
0.0069 at V_GS = -10 V
0.0088 at V_GS = -4.5 V
TO-263
I_D (A) ^d
-110
S
FEATURES
• TrenchFET^® power MOSFET
• Package with low thermal resistance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
G
Top View
S
D
G
P-Channel MOSFET
D
Ordering Information:
SUM110P06-07L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^d
(T_J = 175 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current
Single Pulse Avalanche Energy ^a
Power Dissipation
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C ^c
T_A = 25 °C ^b
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case
Notes
a. Duty cycle ≤ 1 %.
b. When mounted on 1" square PCB (FR4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
PCB mount ^b
SYMBOL
R_thJA
R_thJC
LIMIT
-60
± 20
-110
-95
-240
-75
281
375
3.75
-55 to +175
TYPICAL
40
0.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1278-Rev. D, 08-Jun-15
1
Document Number: 72439
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000