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SUM110P06-07L_15 Datasheet, PDF (2/9 Pages) Vishay Siliconix – P-Channel 60 V (D-S) 175 MOSFET
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www.vishay.com
SUM110P06-07L
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
VDS = -60 V, VGS = 0 V
VDS = -60 V, VGS = 0 V, TJ = 125 °C
VDS = -60 V, VGS = 0 V, TJ = 175 °C
VDS = -5 V, VGS = -10 V
VGS = -10 V, ID = -30 A
VGS = -10 V, ID = -30 A, TJ = 125 °C
VGS = -10 V, ID = -30 A, TJ = 175 °C
VGS = -4.5 V, ID = -20 A
VDS = -15 V, ID = -50 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Gate-Source Charge c
Qg
Qgs
VDS = -30 V, VGS = -10 V, ID = -110 A
Gate-Drain Charge c
Qgd
Gate Resistance
Turn-On Delay Time c
Rg
td(on)
f = 1 MHz
Rise Time c
Turn-Off Delay Time c
Fall Time c
tr
td(off)
tf
VDD = -30 V, RL = 0.27 Ω
ID ≅ -110 A, VGEN = -10 V, Rg = 1 Ω
Drain-Source Body Diode Characteristics (TC = 25 °C b)
Continuous Current
IS
Pulsed Current
ISM
Forward Voltage a
VSD
IF = -85 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Charge
IRM(REC)
IF = -85 A, dI/dt = 100 A/μs
Reverse Recovery Charge
Qrr
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
-60
-1
-
-
-
-
-120
-
-
-
-
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
MAX.
-
-
-
-
-
-
-
0.0055
-
-
0.0070
-
-
-3
± 100
-1
-50
-250
-
0.0069
0.0115
0.0138
0.0088
-
11 400
-
1200
-
900
-
230
345
50
-
60
-
3
-
20
30
25
40
110
200
50
100
-
-110
-
-240
-1
-1.5
91
137
-6
-9
0.21
0.44
UNIT
V
nA
μA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
A
μC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1278-Rev. D, 08-Jun-15
2
Document Number: 72439
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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