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SUM110P06-07L_15 Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 60 V (D-S) 175 MOSFET
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
200
VGS = 10 V thru 5 V
160
160
4V
120
120
SUM110P06-07L
Vishay Siliconix
80
40
3V
0
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
80
TC = 125 °C
40
25 °C
-55 °C
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
250
TC = -55 °C
200
25 °C
150
125 °C
100
50
0
0
15
30
45
60
75
90
ID - Drain Current (A)
Transconductance
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
0
VGS = 4.5 V
VGS = 10 V
20
40
60
80
100 120
ID - Drain Current (A)
On-Resistance vs. Drain Current
14 000
20
12 000
Ciss
10 000
8000
16
VDS = 30 V
ID = 110 A
12
6000
8
4000
2000
Coss
Crss
4
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
0
0 50 100 150 200 250 300 350 400 450
Qg - Total Gate Charge (nC)
Gate Charge
S15-1278-Rev. D, 08-Jun-15
3
Document Number: 72439
For technical questions, contact: pmostechsupport@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000