SUD50P04-09L-E3 Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 40 V (D-S), 175 °C MOSFET

SUD50P04-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.8
100
V_GS = 10 V
1.6
I_D = 50 A
1.4
1.2
10
T_J = 150 °C
T_J = 25 °C
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
60
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1000
50
40
30
20
10
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
Limited by R_DS(on)*
100
I_DM Limited
P(t) = 0.0001
I_D(on)
Limited
10
P(t) = 0.001
T_C = 25 °C
Single Pulse
P(t) = 0.01
P(t) = 0.1
BVDSS Limited
P(t) = 1
1
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72243.
www.vishay.com
4
Document Number: 72243
S10-0546-Rev. C, 08-Mar-10