SUD50P04-09L-E3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 40 V (D-S), 175 °C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
V_GS = 10 V thru 5 V
4V
80
80
SUD50P04-09L
Vishay Siliconix
60
60
40
20
0
0
120
100
80
3V
2V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = - 55 °C
25 °C
125 °C
60
40
20
0
0
20
40
60
80
100
V_GS - Gate-to-Source Voltage (V)
Transconductance
8000
7000
6000
5000
C_iss
4000
3000
2000
1000
C_oss
C_rss
0
0 5 10 15 20 25 30 35 40
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 72243
S10-0546-Rev. C, 08-Mar-10
40
T_C = 125 °C
20
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.020
0.016
0.012
0.008
V_GS = 4.5 V
V_GS = 10 V
0.004
0.000
0
10
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
8
V_DS = 20 V
I_D = 50 A
6
4
2
0
0
20
40
60
80
100 120
Q_g - Total Gate Charge (nC)
Gate Charge
www.vishay.com
3