SUD50P04-09L-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 40 V (D-S), 175 °C MOSFET

SUD50P04-09L
Vishay Siliconix
P-Channel 40 V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 40
0.0094 at V_GS = - 10 V
0.0145 at V_GS = - 4.5 V
I_D (A)^d
- 50
- 50
TO-252
FEATURES
• TrenchFET^® Power MOSFETs
• 175 °C Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
S
G
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P04-09L-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175 °C)
Pulsed Drain Current
V_DS
- 40
V
V_GS
± 20
T_C = 25 °C
T_C = 125 °C
I_D
- 50^d
- 50^d
A
I_DM
- 100
Avalanche Current
Single Avalanche Energy^a
Power Dissipation
I_AS
- 50
L = 0.1 mH
E_AS
125
mJ
T_C = 25 °C
T_A = 25 °C
P_D
136^c
3^{b, c}
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^b
Junction-to-Case
Notes:
a. Duty cycle ≤ 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
0.82
Maximum
18
50
1.1
Unit
°C/W
Document Number: 72243
S10-0546-Rev. C, 08-Mar-10
www.vishay.com
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