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SUD50P04-09L-E3 Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 40 V (D-S), 175 °C MOSFET
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SUD50P04-09L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 32 V, VGS = 0 V
VDS = - 32 V, VGS = 0 V, TJ = 125 °C
VDS = - 32 V, VGS = 0 V, TJ = 175 °C
VDS = - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 24 A
VGS = - 10 V, ID = - 50 A, TJ = 125 °C
VGS = - 10 V, ID = - 50 A, TJ = 175 °C
VGS = - 4.5 V, ID = - 18 A
VDS = - 5 V, ID = - 24 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = - 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VDS = - 20 V, VGS = - 10 V, ID = - 50 A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = - 20 V, RL = 0.4 Ω
ID ≅ - 50 A, VGEN = - 10 V, Rg = 6 Ω
Fall Timec
tf
Source Drain-Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
Forward Voltagea
ISM
VSD
IF = - 50 A, VGS = 0 V
Reverse Recovery Time
trr
IF = - 50 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
- 40
-1
- 50
Typ.
Max.
-3
± 100
-1
- 50
- 150
0.0075
0.0115
73
0.0094
0.014
0.017
0.0145
4800
700
550
102
150
18.5
27
10
15
60
90
145
220
140
220
- 1.0
55
- 50
- 100
- 1.5
85
Unit
V
nA
µA
A
Ω
S
pF
nC
ns
A
V
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72243
S10-0546-Rev. C, 08-Mar-10
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