SUD50N03-10CP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175 Degrees Celcious, MOSFET PWM Optimized

SUD50N03-10CP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.00
50
1.75
V_GS = 10 V
I_D = 15 A
Source-Drain Diode Forward Voltage
1.50
1.25
T_J = 150_C
10
T_J = 25_C
1.00
0.75
0.50
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Ambient Temperature
25
20
1
0
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
1000
100
Safe Operating Area
Limited
by r_DS(on)
10 ms
100 ms
15
10
1 ms
10 ms
10
1
100 ms
1s
5
0.1
T_A = 25_C
Single Pulse
10 s
100 s
dc
0
0
25 50 75 100 125 150 175
T_A – Case Temperature (_C)
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
www.vishay.com
4
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 40_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 71791
S-05485—Rev. B, 21-Jan-02