 English |
|
|
|
|
|
|
|
| SUD50N03-10CP Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175 Degrees Celcious, MOSFET PWM Optimized | |||
| |||
| ◁ |
SUD50N03-10CP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125_C
VDS = 24 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
VGS = 10 V, ID = 15 A, TJ = 125_C
VGS = 10 V, ID = 15 A, TJ = 175_C
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 4.5 V, ID = 15 A
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
RG
td(on)
tr
td(off)
tf
VDD = 15 V, RL = 1 W
ID ] 15 A, VGEN = 10 V, RG = 6 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
IS
ISM
VSD
IF = 15 A, VGS = 0 V
trr
IF = 15 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min
30
1
50
20
Typ Max Unit
V
"100
nA
1
50
mA
150
A
0.008 0.010
0.016
W
0.020
0.0105 0.012
60
S
1725
425
pF
120
13
18
4.5
nC
4.0
1.7
W
10
15
160
240
ns
30
45
55
85
15
A
100
0.85
12
V
80
110
ns
www.vishay.com
2
Document Number: 71791
S-05485âRev. B, 21-Jan-02
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese