SUD50N03-10CP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175 Degrees Celcious, MOSFET PWM Optimized

New Product
SUD50N03-10CP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
V_GS = 10 thru 4 V
40
40
Transfer Characteristics
30
30
20
10
0
0
100
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transconductance
20
10
0
0.0
T_C = 125_C
25_C
–55_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS – Gate-to-Source Voltage (V)
0.015
On-Resistance vs. Drain Current
80
T_C = –55_C
0.012
V_GS = 4.5 V
60
25_C
0.009
V_GS = 10 V
125_C
40
0.006
20
0.003
0
0
2500
2000
1500
10
20
30
40
50
I_D – Drain Current (A)
Capacitance
C_iss
0.000
0
10
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
8
V_DS = 15 V
I_D = 15 A
6
1000
500
0
0
C_oss
C_rss
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
Document Number: 71791
S-05485—Rev. B, 21-Jan-02
4
2
0
0 5 10 15 20 25 30 35 40
Q_g – Total Gate Charge (nC)
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