SUD50N03-10CP Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175 Degrees Celcious, MOSFET PWM Optimized

New Product
SUD50N03-10CP
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (W)
0.010 @ V_GS = 10 V
30
0.012 @ V_GS = 4.5 V
I_D (A)^a
15
18
FEATURES
D TrenchFETr Power MOSFETS
D PWM Optimized for High Efficiency
APPLICATIONS
D Buck Converter
– High Side
– Low Side
D Synchronous Rectifier
– Secondary Rectifier
D
TO-252
GDS
Top View
Order Number:
SUD50N03-10CP
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 100_C
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
15
14
100
20
71^b
8.3^a
–55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t v 10 sec
Steady State
Steady State
Notes:
a Surface mounted on 1” x 1” FR4 Board, t v 10 sec.
b See SOA curve for voltage derating.
Document Number: 71791
S-05485—Rev. B, 21-Jan-02
Symbol
R_thJA
R_thJC
Typical
15
40
1.75
Maximum
18
50
2.1
Unit
_C/W
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