SUD50N03-10 Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C MOSFET

SUD50N03-10
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
On-Resistance vs. Junction Temperature
2.4
V_GS = 10 V
2.0 ^{ID = 50 A}
Source-Drain Diode Forward Voltage
100
T_J = 175_C
1.6
T_J = 25_C
1.2
10
0.8
0.4
0
-50 -25 0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
Thermal Ratings
Maximum Drain Current vs.
Ambient Temperature
20
1
0
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
500
16
12
8
4
0
0 25 50 75 100 125 150 175
T_A – Ambient Temperature (_C)
100
Limited
by r_DS(on)
10
10, 100 ms
1 ms
1
0.1
0.1
10 ms
T_A = 25_C
Single Pulse
100 ms
1s
dc
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.02
0.05
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
10
30
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-57253—Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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