SUD50N03-10 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C MOSFET

SUD50N03-10
Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
Product Summary
V_DS (V)
30
r_DS(on) (W)
0.010 @ V_GS = 10 V
0.019 @ V_GS = 4.5 V
I_D (A)
"15
"12
D
TO-252
GD S
Top View
Order Number:
SUD50N03-10
Drain Connected to Tab
G
S
N-Channel MOSFET
Absolute Maximum Ratings (T_A = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 100_C
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
V
"20
"15
"10
A
"100
15
83
W
4^a
–55 to 175
_C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum Unit
Maximum Junction-to-Ambient^a
R_thJA
30
Maximum Junction-to-Case
R_thJC
1.8
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70265.
_C/W
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-57253—Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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