SUD50N03-10 Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C MOSFET

SUD50N03-10
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
200
V_GS = 10, 9, 8, 7 V
160
6V
120
5V
Transfer Characteristics
100
T_C = –55_C
25_C
80
125_C
60
80
40
40
4V
2, 3 V
0
0
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transconductance
80
T_C = –55_C
60
25_C
40
125_C
20
0
0
5000
4000
3000
10
20
30
40
50
I_D – Drain Current (A)
Capacitance
C_iss
20
0
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
0.030
On-Resistance vs. Drain Current
0.025
0.020
0.015
0.010
V_GS = 4.5 V
V_GS = 10 V
0.005
0
0
20
40
60
80
100
I_D – Drain Current (A)
Gate Charge
10
8
V_DS = 15 V
I_D = 50 A
6
2000
4
C_oss
1000
2
C_rss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
Q_g – Total Gate Charge (nC)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-57253—Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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