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SUD50N03-10 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C MOSFET
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SUD50N03-10
Siliconix
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID =15 A
VGS = 10 V, ID =15 A, TJ = 125_C
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, F = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 50 A
VDD = 15 V, RL = 0.3 W
ID ^ 50 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
IF = 100 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Min Typa Max Unit
30
V
1.0
2.0
"100 nA
1
mA
50
50
A
0.010
0.018 W
0.019
20
S
3200 6000
800
pF
150
55
100
10
nC
9
16
30
8
20
ns
33
60
20
40
100
A
1.2
1.5
V
55
100
ns
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-57253—Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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