SUD19P06-60 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SUD19P06-60
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
1.9
I_D = 10 A
1.6
V_GS = 10 V
10
1.3
1.0
T_J = 150 °C
T_J = 25 °C
0.7
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
25
20
15
10
5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Maximum Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
Limited by r_DS(on)*
10
1
100 ms
1s
10 s
DC
0.1
BVDSS Limited
0.01
T_C = 25 °C
Single Pulse
0.001
0.1
* V_GS
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
www.vishay.com
4
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 69253
S-72191-Rev. A, 22-Oct-07