SUD19P06-60 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

New Product
P-Channel 60-V (D-S) MOSFET
SUD19P06-60
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
- 60
0.060 at V_GS = - 10 V
0.077 at V_GS = - 4.5 V
I_D (A)^d
- 19
- 16.8
Q_g (Typ)
26
FEATURES
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• High Side Switch for Full Bridge Converter
• DC/DC Converter for LCD Display
RoHS
COMPLIANT
TO-252
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
- 18.3
- 8.19
A
I_DM
- 30
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulse^a
I_AS
- 22
L = 0.1 mH
E_AS
24.2
mJ
Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
38.5^c
2.3^{b, c}
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes:
a. Duty cycle ≤ 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Based up on T_C = 25 °C.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
17
45
2.7
Maximum
21
55
3.25
Unit
°C/W
Document Number: 69253
S-72191-Rev. A, 22-Oct-07
www.vishay.com
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