SUD19P06-60 Datasheet, PDF (2/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SUD19P06-60
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = - 250 µA
- 60
V
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
-1
-3
V
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
± 100
nA
V_DS = - 60 V, V_GS = 0 V
-1
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 60 V, V_GS = 0 V, T_J = 125 °C
- 50
µA
On-State Drain Current^a
I_D(on)
V_DS = - 60 V, V_GS = 0 V, T_J = 150 ° C
V_DS = - 5 V, V_GS = - 10 V
- 30
- 125
A
V_GS = - 10 V, I_D = - 10 A
0.048 0.060
Drain-Source On-State Resistance^a
r_DS(on)
V_GS = - 10 V, I_D = - 10 A, T_J = 125 °C
V_GS = - 10 V, I_D = - 10 A, T_J = 150 °C
0.102
Ω
0.120
Forward Transconductance^a
V_GS = - 4.5 V, I_D = - 5 A
g_fs
V_DS = - 15 V, I_D = - 10 A
0.061 0.077
22
S
Dynamic^b
Input Capacitance
C_iss
1140 1710
Output Capacitance
C_oss
V_GS = 0 V, V_DS = - 25 V, f = 1 MHz
130
pF
Reverse Transfer Capacitance
C_rss
90
Total Gate Charge^c
Q_g
26
40
Gate-Source Charge^c
Q_gs
V_DS = - 30 V, V_GS = - 10 V, I_D = - 10 A
4.5
nC
Gate-Drain Charge^c
Q_gd
7.0
Gate Resistance
Turn-On Delay Time^c
R_g
t_d(on)
f = 1 MHz
7.0
Ω
8
15
Rise Time^c
Turn-Off Delay Time^c
t_r
t_d(off)
V_DD = - 30 V, R_L = 3 Ω
I_D ≅ - 19 A, V_GEN = - 10 V, R_g = 2.5 Ω
9
15
ns
65
100
Fall Time^c
t_f
30
45
Drain-Source Body Diode and Characteristics (T_C = 25 °C)^b
Continuous Current
I_S
Pulsed Current
I_SM
- 30
A
- 30
Forward Voltage^a
V_SD
I_F = - 19 A, V_GS = 0 V
- 1.0
- 1.5
V
Reverse Recovery Time
t_rr
I_F = - 19 A, di/dt = 100 A/µs
41
61
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69253
S-72191-Rev. A, 22-Oct-07